BD243CG
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см. техническую документацию
см. техническую документацию
1 370 ֏
от 2 шт. —
1 020 ֏
от 10 шт. —
740 ֏
от 15 шт. —
610 ֏
1 шт.
на сумму 1 370 ֏
Описание
Описание Транзистор NPN, биполярный, 100В, 6А, 65Вт, TO220AB Характеристики
| Категория | Транзистор |
| Тип | биполярный |
| Вид | PNP |
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current | 6 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 50 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 9.28 mm(Max) |
| Length | 10.28 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 65 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BD243C |
| Transistor Polarity | NPN |
| Unit Weight | 0.211644 oz |
| Width | 4.82 mm(Max) |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 1 MHz |
| Maximum Power Dissipation | 65 W |
| Minimum DC Current Gain | 20 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Case | TO220AB |
| Collector current | 6A |
| Collector-emitter voltage | 100V |
| Frequency | 3MHz |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | bipolar |
| Power dissipation | 65W |
| Type of transistor | NPN |