MT46V32M16P-5B IT:J, TSOP-66 DDR SDRAM ROHS
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Описание
DDR SDRAM
Micron DDR SDRAM allows applications to transfer data on the rising and falling edges of a clock signal. These features double bandwidth and improve performance over SDR SDRAM. To achieve this functionality, Micron uses a 2n-prefetch architecture where the internal data bus is double the size of the external data bus so data capture can happen two times each clock cycle.
Micron DDR SDRAM allows applications to transfer data on the rising and falling edges of a clock signal. These features double bandwidth and improve performance over SDR SDRAM. To achieve this functionality, Micron uses a 2n-prefetch architecture where the internal data bus is double the size of the external data bus so data capture can happen two times each clock cycle.
Технические параметры
Access Time: | 700 ps |
Brand: | Micron |
Data Bus Width: | 16 bit |
Factory Pack Quantity: Factory Pack Quantity: | 1080 |
Manufacturer: | Micron Technology |
Maximum Clock Frequency: | 200 MHz |
Maximum Operating Temperature: | +85 C |
Memory Size: | 512 Mbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 32 M x 16 |
Package / Case: | TSOP-66 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Series: | MT46V |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 85 mA |
Supply Voltage - Max: | 2.7 V |
Supply Voltage - Min: | 2.5 V |
Type: | SDRAM-DDR |
IC Case / Package | TSOP |
Memory Configuration | 32M x 16bit |
Количество Выводов | 66вывод(-ов) |
Конфигурация памяти DRAM | 32М x 16бит |
Максимальная Рабочая Температура | 85°C |
Максимальная Тактовая Частота | 200МГц |
Минимальная Рабочая Температура | -40°C |
Монтаж Микросхемы | SMD(Поверхностный Монтаж) |
Номинальное Напряжение Питания | 2.6В |
Плотность DRAM | 512Мбит |
Плотность Памяти | 512Мбит |
Стиль Корпуса Микросхемы Памяти | TSOP |
Тактовая Частота | 200МГц |
Тип DRAM | DDR |
Address Bus Width | 15 Bit |
Data Bus Width | 16 Bit |
Density | 512 Mb |
Maximum Clock Rate | 400 MHz |
Maximum Random Access Time | 0.7 ns |
Number of Bits per Word | 16 Bit |
Operating Supply Voltage | 2.6 V |
Operating Temperature | -40 to 85 ?C |
Package | 66TSOP |
Packaging | Trays |
Rad Hard | No |
Type | DDR SDRAM |