FDMC510P, MOSFET P-CH 20V 12A/18A 8MLP
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см. техническую документацию
см. техническую документацию
930 ֏
от 10 шт. —
800 ֏
от 100 шт. —
590 ֏
от 500 шт. —
520 ֏
1 шт.
на сумму 930 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-33-8 |
| Pd - Power Dissipation: | 41 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 116 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Series: | FDMC510P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 12A(Ta), 18A(Tc) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 7860pF @ 10V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerWDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2.3W(Ta), 41W(Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 4.5V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-MLP(3.3x3.3) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±8V |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
Техническая документация
Datasheet
pdf, 374 КБ
Документация
pdf, 178 КБ