FDC6306P, MOSFET 2P-CH 20V 1.9A SSOT6
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см. техническую документацию
см. техническую документацию
530 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
379 ֏
от 100 шт. —
273 ֏
от 500 шт. —
242 ֏
2 шт.
на сумму 1 060 ֏
Альтернативные предложения1
Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Количество Выводов | 6вывод(-ов) |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 20В |
| Непрерывный Ток Стока | 1.9А |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 900мВ |
| Рассеиваемая Мощность | 960мВт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.127Ом |
| Стиль Корпуса Транзистора | SuperSOT |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Resistance | 270 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 960 mW |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Series | PowerTrench |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 3 nC 4.5 V |
| Width | 1.7mm |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 170@4.5V mOhm |
| Typical Fall Time | 3 ns |
| Typical Rise Time | 9 ns |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 6 ns |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 4 S |
| Id - Continuous Drain Current: | 1.9 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC6306P_NL |
| Pd - Power Dissipation: | 960 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 4.2 nC |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Rise Time: | 9 ns |
| Series: | FDC6306P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Техническая документация
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