2SD1980TL, TRANS NPN DARL 100V 2A CPT3
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см. техническую документацию
см. техническую документацию
100 шт., срок 8-10 недель
484 ֏
Кратность заказа 100 шт.
100 шт.
на сумму 48 400 ֏
Альтернативные предложения2
Описание
2Sx Bipolar Junction Transistors
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
Технические параметры
| Brand | ROHM Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Configuration | Single |
| Continuous Collector Current | 2 A |
| DC Collector/Base Gain Hfe Min | 1000 |
| DC Current Gain HFE Max | 1000 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product FT | 80 MHz |
| Manufacturer | ROHM Semiconductor |
| Maximum Collector Cut-Off Current | 10 uA |
| Maximum DC Collector Current | 2 A |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 1 W |
| Product Category | Darlington Transistors |
| Product Type | Darlington Transistors |
| Series | 2SD1980 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Configuration: | Single |
| Continuous Collector Current: | 2 A |
| DC Collector/Base Gain hfe Min: | 1000 |
| DC Current Gain hFE Max: | 1000 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 80 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum Collector Cut-off Current: | 10 uA |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | 2SD1980 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Darlington Transistors |
| Product Type: | Darlington Transistors |
| Series: | 2SD1980 |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Case | SC63 |
| Collector current | 2A |
| Collector-emitter voltage | 100V |
| Current gain | 1k…10k |
| Frequency | 80MHz |
| Kind of package | reel, tape |
| Kind of transistor | Darlington |
| Mounting | SMD |
| Polarisation | bipolar |
| Power dissipation | 1W |
| Type of transistor | NPN |
Техническая документация
Datasheet
pdf, 1382 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг