2SB1706TL, TRANS PNP 30V 2A TSMT3
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см. техническую документацию
см. техническую документацию
3000 шт., срок 8-10 недель
256 ֏
Кратность заказа 100 шт.
от 500 шт. —
207 ֏
от 1000 шт. —
203 ֏
от 3000 шт. —
185 ֏
100 шт.
на сумму 25 600 ֏
Альтернативные предложения2
Описание
2Sx Bipolar Junction Transistors
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
Технические параметры
| Collector Emitter Voltage Max | 30В |
| Continuous Collector Current | 2А |
| DC Current Gain hFE Min | 270hFE |
| DC Усиление Тока hFE | 270hFE |
| Power Dissipation | 500мВт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | SOT-346 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 30 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 180 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 270 |
| DC Current Gain hFE Max: | 270 at 200 mA, 2 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 280 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 2SB1706 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2SB1706 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
Техническая документация
Datasheet 2SB1706TL
pdf, 52 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг