2SK932-23-TB-E, JFET N-CH 50MA 200MW 3CP
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Описание
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Технические параметры
Current - Drain (Idss) @ Vds (Vgs=0) | 10mA @ 5V |
Current Drain (Id) - Max | 50mA |
Drain to Source Voltage (Vdss) | 15V |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | - |
Manufacturer | ON Semiconductor |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C(TJ) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power - Max | 200mW |
Series | - |
Supplier Device Package | 3-CP |
Voltage - Cutoff (VGS off) @ Id | 200mV @ 100ВµA |
Channel Type | N |
Configuration | Single |
Drain Gate On-Capacitance | 10pF |
Idss Drain-Source Cut-off Current | 10 to 17mA |
Maximum Drain Gate Voltage | -15V |
Maximum Drain Source Voltage | 15 V |
Maximum Operating Temperature | +150 °C |
Package Type | CP |
Pin Count | 3 |
Source Gate On-Capacitance | 3pF |
Transistor Configuration | Single |
Width | 1.5mm |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet 2SK932-23-TB-E
pdf, 1044 КБ