RF4E080BNTR, MOSFET N-CH 30V 8A HUML2020L8
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см. техническую документацию
см. техническую документацию
3000 шт., срок 8-10 недель
176 ֏
Мин. кол-во для заказа 5 шт.
от 100 шт. —
163 ֏
от 500 шт. —
150 ֏
от 1000 шт. —
143 ֏
5 шт.
на сумму 880 ֏
Альтернативные предложения2
Описание
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 5 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DFN-2020-8 |
| Part # Aliases: | RF4E080BN |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14.5 nC |
| Rds On - Drain-Source Resistance: | 17.6 mOhms |
| Rise Time: | 10 ns |
| Series: | RF4E080BN |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 1419 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг