FDG6332C, MOSFET N/P-CH 20V SC70-6
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308 ֏
Кратность заказа 10 шт.
от 100 шт. —
247 ֏
от 500 шт. —
185 ֏
10 шт.
на сумму 3 080 ֏
Описание
MOSFET, N & P CH, 20V, 700MA, SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 700mA, 600mA |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 300mW |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 700mA, 4.5V |
| Series | Automotive, AEC-Q101, PowerTrenchВ® |
| Supplier Device Package | SC-88(SC-70-6) |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7 ns, 14 ns |
| Forward Transconductance - Min: | 2.8 S, 1.8 S |
| Id - Continuous Drain Current: | 700 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT-323-6 |
| Part # Aliases: | FDG6332C_NL |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 1.5 nC, 2 nC |
| Rds On - Drain-Source Resistance: | 300 mOhms |
| Rise Time: | 7 ns, 14 ns |
| Series: | FDG6332C |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 9 ns, 6 ns |
| Typical Turn-On Delay Time: | 5 ns, 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV, 1.5 V |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 600 mA, 700 mA |
| Maximum Drain Source Resistance | 442 mΩ, 700 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum Gate Threshold Voltage | 0.3V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 2 |
| Package Type | SOT-363 |
| Pin Count | 6 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V |
| Width | 1.25mm |