STP6N60M2, Силовой МОП-транзистор, N Канал, 600 В, 4.5 А, 1.06 Ом, TO-220AB, Through Hole

Изображения служат только для ознакомления,
см. техническую документацию

220 шт., срок 9-11 недель

1 520 ֏

Мин. кол-во для заказа 8 шт.

от 10 шт. — 1 380 ֏

от 100 шт. — 1 030 ֏

Добавить в корзину 8 шт. на сумму 12 160 ֏

Альтернативные предложения1

Номенклатурный номер: 8015019553

Описание Транзистор: N-MOSFET, MDmesh™ || Plus, полевой, 600В, 2,9А, 60Вт Характеристики

Case	TO220-3
Drain current	2.9A
Drain-source voltage	600V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±25V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
On-state resistance	1200mΩ
Polarisation	unipolar
Power dissipation	60W
Technology	MDmesh™ \|\| Plus
Type of transistor	N-MOSFET
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	22.5 ns
Id - Continuous Drain Current:	4.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	60 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	8 nC
Rds On - Drain-Source Resistance:	1.06 Ohms
REACH - SVHC:	Details
Rise Time:	7.4 ns
Series:	STP6N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	9.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	2.3