STP21NM60ND, Транзистор полевой MOSFET N-канальный 600В 17А 140Вт

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120 шт. с центрального склада, срок 3 недели

840 ֏

Мин. кол-во для заказа 3 шт.

от 5 шт. — 800 ֏

от 10 шт. — 720 ֏

от 20 шт. — 690 ֏

3 шт. на сумму 2 520 ֏

Альтернативные предложения1

Номенклатурный номер: 8000885926

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой MOSFET N-канальный 600В 17А 140Вт

Корпус	TO-220AB
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	17
Maximum Drain Source Resistance (mOhm)	220 10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±25
Maximum Gate Threshold Voltage (V)	5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	140000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Obsolete
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	FDmesh II
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	48
Typical Gate Charge @ 10V (nC)	60
Typical Gate Charge @ Vgs (nC)	60 10V
Typical Input Capacitance @ Vds (pF)	1800 50V
Typical Rise Time (ns)	16
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	18
Maximum Continuous Drain Current - (A)	17
Maximum Drain Source Resistance - (mOhm)	220@10V
Maximum Drain Source Voltage - (V)	600
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	5
Maximum Power Dissipation - (mW)	140000
Military	No
Operating Temperature - (??C)	-55~150
Typical Gate Charge @ 10V - (nC)	60
Typical Gate Charge @ Vgs - (nC)	60@10V
Typical Input Capacitance @ Vds - (pF)	1800@50V
Вес, г	3.5