STL3NM60N, Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
230 шт., срок 7-9 недель
850 ֏
Мин. кол-во для заказа 170 шт.
Добавить в корзину 170 шт.
на сумму 144 500 ֏
Альтернативные предложения3
Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 0.65 |
| Maximum Drain Source Resistance (mOhm) | 1800 10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat |
| Typical Fall Time (ns) | 20 |
| Typical Gate Charge @ 10V (nC) | 9.5 |
| Typical Gate Charge @ Vgs (nC) | 9.5 10V |
| Typical Input Capacitance @ Vds (pF) | 188 50V |
| Typical Rise Time (ns) | 6.2 |
| Typical Turn-Off Delay Time (ns) | 20.8 |
| Typical Turn-On Delay Time (ns) | 8.6 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 3000 |
| Fall Time | 20 ns |
| Id - Continuous Drain Current | 2.2 A |
| Manufacturer | STMicroelectronics |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerFLAT-3.3x3.3-HV-8 |
| Pd - Power Dissipation | 2 W |
| Qg - Gate Charge | 9.5 nC |
| Rds On - Drain-Source Resistance | 1.8 Ohms |
| Rise Time | 6.2 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20.8 ns |
| Typical Turn-On Delay Time | 8.6 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 20 ns |
| Id - Continuous Drain Current: | 2.2 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerFLAT-3.3x3.3-HV-8 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.5 nC |
| Rds On - Drain-Source Resistance: | 1.8 Ohms |
| Rise Time: | 6.2 ns |
| Series: | STL3NM60N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 20.8 ns |
| Typical Turn-On Delay Time: | 8.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 838 КБ
Datasheet STL3NM60N
pdf, 860 КБ
Datasheet STL3NM60N
pdf, 844 КБ
Datasheet STL3NM60N
pdf, 844 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
