STQ1HNK60R-AP, Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R
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см. техническую документацию
см. техническую документацию
4000 шт., срок 7-9 недель
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Formed |
| Maximum Continuous Drain Current (A) | 0.4 |
| Maximum Drain Source Resistance (mOhm) | 8500@10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| Supplier Temperature Grade | Industrial |
| Typical Fall Time (ns) | 25 |
| Typical Gate Charge @ 10V (nC) | 7 |
| Typical Gate Charge @ Vgs (nC) | 7@10V |
| Typical Input Capacitance @ Vds (pF) | 156@25V |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 25 ns |
| Id - Continuous Drain Current: | 400 mA |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Ammo Pack |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 8.5 Ohms |
| Rise Time: | 5 ns |
| Series: | STQ1HNK60R |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 6.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.25 V |
| Maximum Continuous Drain Current | 400 mA |
| Maximum Drain Source Resistance | 8.5 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3 W |
| Minimum Gate Threshold Voltage | 2.25V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-92 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Width | 3.94mm |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 455 КБ
Datasheet
pdf, 467 КБ
Datasheet STQ1HNK60R-AP
pdf, 429 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
