STD1NK80ZT4, Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R

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10000 шт., срок 7-9 недель

396 ֏

Кратность заказа 2500 шт.

от 5000 шт. — 304 ֏

от 10000 шт. — 295 ֏

2500 шт. на сумму 990 000 ֏

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Номенклатурный номер: 8001454448

Описание Транзистор N-МОП, полевой, 800В 1A 45Вт 16Ом TO252 Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	55 ns
Forward Transconductance - Min:	0.8 S
Id - Continuous Drain Current:	1 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	45 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7.7 nC
Rds On - Drain-Source Resistance:	13 Ohms
Rise Time:	30 ns
Series:	STD1NK80Z
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	55 ns
Forward Transconductance - Min	0.8 S
Id - Continuous Drain Current	1 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	DPAK-3
Packaging	Reel
Pd - Power Dissipation	45 W
Product Category	MOSFET
Qg - Gate Charge	7.7 nC
Rds On - Drain-Source Resistance	13 Ohms
Rise Time	30 ns
RoHS	Details
Series	STD1NK80Z
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	22 ns
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Breakdown Voltage	30 V
Вес, г	0.6