STL60P4LLF6
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см. техническую документацию
см. техническую документацию
3 шт. с центрального склада, срок 2-3 недели
3 120 ֏
от 2 шт. —
2 630 ֏
Добавить в корзину 1 шт.
на сумму 3 120 ֏
Альтернативные предложения3
Описание
Электроэлемент
MOSFET, P-CH, -40V, -60A, POWERFLAT; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | ?20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 ?C |
| Package | 8Power Flat |
| Packaging | Tape & Reel |
| Rad Hard | No |
| RDS-on | 0.014@10V Ohm |
| Typical Fall Time | 20 ns |
| Typical Rise Time | 60.6 ns |
| Typical Turn-Off Delay Time | 170 ns |
| Typical Turn-On Delay Time | 49.4 ns |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 20 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 100 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Rds On - Drain-Source Resistance: | 11.5 mOhms |
| Rise Time: | 60.6 ns |
| Series: | STL60P4LLF6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 170 ns |
| Typical Turn-On Delay Time: | 49.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Category | Power MOSFET |
| Life Cycle | Active |
| Maximum Continuous Drain Current - (A) | 60 |
| Maximum Drain Source Resistance - (mOhm) | 19@4.5V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Source Voltage - (V) | ?20 |
| Maximum Gate Threshold Voltage - (V) | 1(Min) |
| Maximum Operating Temperature - (?C) | 175 |
| Maximum Power Dissipation - (mW) | 100000 |
| Military Qualified | No |
| Minimum Operating Temperature - (?C) | -55 |
| Number of Elements per Chip | 1 |
| Package Family Name | Power Flat |
| Pin Count | 8 |
| Standard Package Name | Power Flat |
| Supplier Package | Power Flat EP |
| Technology | STripFET F6 |
| Typical Gate Charge @ Vgs - (nC) | 34@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 3525@25V |
| Forward Diode Voltage | 1.1V |
| Maximum Drain Source Resistance | 19 mΩ |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 100 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Package Type | PowerFLAT 5x6 |
| Series | STripFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V |
| Width | 5.4mm |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 979 КБ
Datasheet
pdf, 991 КБ
Datasheet STL60P4LLF6
pdf, 881 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 июля1 | бесплатно |
| HayPost | 22 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
