STW12N150K5

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1 шт. с центрального склада, срок 3 недели

13 600 ֏

1 шт. на сумму 13 600 ֏

Альтернативные предложения1

Номенклатурный номер: 8001944037

Электроэлемент

N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Brand	STMicroelectronics
Channel Mode	Enhancement
Factory Pack Quantity	600
Fall Time	37 ns
Height	5.15 mm
Id - Continuous Drain Current	7 A
Length	20.15 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	250 W
Product	Power MOSFET
Product Category	MOSFET
Qg - Gate Charge	47 nC
Rds On - Drain-Source Resistance	1.9 Ohms
Rise Time	8 ns
RoHS	Details
Series	MDmesh K5
Technology	Si
Transistor Polarity	N-Channel
Type	MDmesh K5
Typical Turn-Off Delay Time	90 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	1200 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3 V to 5 V
Width	15.75 mm
Case	TO247
Drain current	4A
Drain-source voltage	1.5kV
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	1.6Ω
Polarisation	unipolar
Power dissipation	250W
Type of transistor	N-MOSFET
Continuous Drain Current (Id)	7A
Drain Source On Resistance (RDS(on)@Vgs,Id)	1.9Ω@3.5A, 10V
Drain Source Voltage (Vdss)	1.5kV
Gate Threshold Voltage (Vgs(th)@Id)	5V@100uA
Input Capacitance (Ciss@Vds)	1.36nF@100V
Power Dissipation (Pd)	250W
Total Gate Charge (Qg@Vgs)	47nC@10V
Вес, г	16.5