STU6N90K5
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см. техническую документацию
см. техническую документацию
98 шт. с центрального склада, срок 3 недели
2 120 ֏
от 2 шт. —
1 680 ֏
от 5 шт. —
1 330 ֏
от 10 шт. —
1 220 ֏
1 шт.
на сумму 2 120 ֏
Альтернативные предложения1
Описание
Электроэлемент
MOSFET N-channel 900 V, 0.91 Ohm typ 6 A MDmesh K5 Power MOSFET in an IPAK package
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 3000 |
Fall Time | 15.5 ns |
Id - Continuous Drain Current | 6 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-251-3 |
Pd - Power Dissipation | 110 W |
Product Category | MOSFET |
Qg - Gate Charge | 11 nC |
Rds On - Drain-Source Resistance | 910 mOhms |
Rise Time | 12.2 ns |
RoHS | Details |
Series | MDmesh K5 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 30.4 ns |
Typical Turn-On Delay Time | 12.4 ns |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | +/-30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 15.5 ns |
Id - Continuous Drain Current: | 6 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-251-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 11 nC |
Rds On - Drain-Source Resistance: | 910 mOhms |
Rise Time: | 12.2 ns |
Series: | STU6N90K5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 30.4 ns |
Typical Turn-On Delay Time: | 12.4 ns |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.8178 |
Техническая документация
Datasheet
pdf, 559 КБ
Datasheet STU6N90K5
pdf, 698 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 7 августа1 | бесплатно |
HayPost | 11 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг