STP9NK90Z

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см. техническую документацию

10 шт. с центрального склада, срок 3 недели

3 570 ֏

от 2 шт. — 3 040 ֏

от 10 шт. — 2 760 ֏

1 шт. на сумму 3 570 ֏

Альтернативные предложения3

Номенклатурный номер: 8001987473

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 900В, 5А, 160Вт, TO220-3 Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	28 ns
Height	9.15 mm
Id - Continuous Drain Current	8 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	160 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	1.3 Ohms
Rise Time	13 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	55 ns
Typical Turn-On Delay Time	22 ns
Vds - Drain-Source Breakdown Voltage	900 V
Vgs - Gate-Source Voltage	30 V
Width	4.6 mm
кол-во в упаковке	50
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Resistance	1.3 Ω
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Power Dissipation	160 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	72 nC @ 10 V
Вес, г	3.5