STW11NK90Z
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см. техническую документацию
см. техническую документацию
2 шт. с центрального склада, срок 3 недели
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1 шт.
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Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 900В, 5,8А, Idm: 36,8А, 200Вт, TO247 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 600 |
Fall Time | 50 ns |
Height | 20.15 mm |
Id - Continuous Drain Current | 9.2 A |
Length | 15.75 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-247-3 |
Packaging | Tube |
Pd - Power Dissipation | 200 W |
Product Category | MOSFET |
Qg - Gate Charge | 95 nC |
Rds On - Drain-Source Resistance | 980 mOhms |
Rise Time | 19 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 76 ns |
Typical Turn-On Delay Time | 30 ns |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 5.15 mm |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 9.2 |
Maximum Drain Source Resistance (mOhm) | 980@10V |
Maximum Drain Source Voltage (V) | 900 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 200000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | SuperMESH |
Standard Package Name | TO |
Supplier Package | TO-247 |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Fall Time (ns) | 50 |
Typical Gate Charge @ 10V (nC) | 95 |
Typical Gate Charge @ Vgs (nC) | 95@10V |
Typical Input Capacitance @ Vds (pF) | 3000@25V |
Typical Rise Time (ns) | 19 |
Typical Turn-Off Delay Time (ns) | 76 |
Typical Turn-On Delay Time (ns) | 30 |
Maximum Continuous Drain Current | 9.2 A |
Maximum Drain Source Resistance | 980 mΩ |
Maximum Drain Source Voltage | 900 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Power Dissipation | 200 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Through Hole |
Package Type | TO-247 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 95 nC @ 10 V |
Вес, г | 5 |
Техническая документация
Сроки доставки
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