STP40NF10L
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см. техническую документацию
см. техническую документацию
33 шт. с центрального склада, срок 2-3 недели
2 360 ֏
от 2 шт. —
1 920 ֏
от 10 шт. —
1 680 ֏
Добавить в корзину 1 шт.
на сумму 2 360 ֏
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 100В, 25А, 150Вт, TO220-3
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 24 ns |
| Forward Transconductance - Min | 25 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 40 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 33 mOhms |
| Rise Time | 82 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 64 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 17 V |
| Width | 4.6 mm |
| Base Product Number | STP40 -> |
| Current - Continuous Drain (Id) @ 25В°C | 40A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 175В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | В±17V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Resistance | 33 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -17 V, +17 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 1V |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 46 nC @ 5 V |
| Вес, г | 3.5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 июля1 | бесплатно |
| HayPost | 22 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
