STB30NF20
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см. техническую документацию
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3 000 ֏
1 шт.
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Альтернативные предложения2
Описание
Электроэлемент
; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:125W Rohs Compliant: Yes |Stmicroelectronics STB30NF20
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | STripFET |
Maximum Continuous Drain Current - (A) | 30 |
Maximum Drain Source Resistance - (mOhm) | 75@10V |
Maximum Drain Source Voltage - (V) | 200 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Power Dissipation - (mW) | 125000 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 3 |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Typical Gate Charge @ 10V - (nC) | 38 |
Typical Gate Charge @ Vgs - (nC) | 38@10V |
Typical Input Capacitance @ Vds - (pF) | 1597@25V |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Resistance | 75 mΩ |
Maximum Drain Source Voltage | 200 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 125 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | D2PAK(TO-263) |
Series | STripFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 38 nC @ 10 V |
Width | 9.35mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 8.8 ns |
Id - Continuous Drain Current: | 30 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 125 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 38 nC |
Rds On - Drain-Source Resistance: | 75 mOhms |
Rise Time: | 15.7 ns |
Series: | STB30NF20 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | STripFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 38 ns |
Typical Turn-On Delay Time: | 35 ns |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 2.5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 372 КБ
Datasheet STB30NF20
pdf, 390 КБ
Datasheet STP30NF20
pdf, 386 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 7 августа1 | бесплатно |
HayPost | 11 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг