STN1NK80Z
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см. техническую документацию
см. техническую документацию
25 шт. с центрального склада, срок 3 недели
710 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
432 ֏
от 10 шт. —
344 ֏
2 шт.
на сумму 1 420 ֏
Альтернативные предложения4
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 800В, 160мА, 2,5Вт, SOT223
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 4000 |
| Fall Time | 55 ns |
| Forward Transconductance - Min | 0.8 S |
| Height | 1.8 mm |
| Id - Continuous Drain Current | 250 mA |
| Length | 6.5 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 7.7 nC |
| Rds On - Drain-Source Resistance | 16 Ohms |
| Rise Time | 30 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Power Mosfet |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 3.5 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Resistance | 16 Ω |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 55 ns |
| Forward Transconductance - Min: | 0.8 S |
| Id - Continuous Drain Current: | 250 mA |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.7 nC |
| Rds On - Drain-Source Resistance: | 16 Ohms |
| Rise Time: | 30 ns |
| Series: | STN1NK80Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel MOSFET |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.25 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Maximum Drain Source Resistance (mOhm) | 16000@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Tab | Tab |
| Typical Fall Time (ns) | 55 |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V |
| Typical Input Capacitance @ Vds (pF) | 160@25V |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Typical Turn-On Delay Time (ns) | 8 |
| Транспортная упаковка: размер/кол-во | 58*46*37/4000 |
| MSL(Уровень чувствительности к влажности) | 1 |
| Диапазон рабочих температур | -55…+150 °С |
| Емкость, пФ | 160 |
| Заряд затвора, нКл | 7.7 |
| Максимальный ток стока (при Ta=25C), А | 0.25 |
| Описание | N-Channel 800 V 250mA(Tc)2.5W(Tc)Surface Mount SOT-223 |
| Способ монтажа | поверхностный(SMT) |
| Тип | MOSFET |
| Тип проводимости | N |
| Упаковка | REEL, 4000 шт. |
| Вес, г | 0.85 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 7 августа1 | бесплатно |
| HayPost | 11 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
