STP3NK60ZFP

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156 шт. с центрального склада, срок 2-3 недели

2 090 ֏

от 2 шт. — 1 650 ֏

от 5 шт. — 1 310 ֏

от 10 шт. — 1 190 ֏

Добавить в корзину 1 шт. на сумму 2 090 ֏

Альтернативные предложения3

Номенклатурный номер: 8002019104

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 600В, 1,51А, 20Вт, TO220FP Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	14 ns
Height	9.3 mm
Id - Continuous Drain Current	2.4 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220FP-3
Packaging	Tube
Pd - Power Dissipation	20 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	3.6 Ohms
Rise Time	14 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	9 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	4.6 mm
Automotive	No
Channel Type	N
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	2.4
Maximum Drain Source Resistance (mOhm)	3600 10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	20000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	SuperMESH
Standard Package Name	TO-220
Supplier Package	TO-220FP
Tab	Tab
Typical Fall Time (ns)	14
Typical Gate Charge @ 10V (nC)	11.8
Typical Gate Charge @ Vgs (nC)	11.8 10V
Typical Input Capacitance @ Vds (pF)	311 25V
Typical Rise Time (ns)	14
Typical Turn-Off Delay Time (ns)	19
Typical Turn-On Delay Time (ns)	9
Вес, г	2