STP2N62K3

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57 шт. с центрального склада, срок 2-3 недели

1 920 ֏

от 2 шт. — 1 430 ֏

от 5 шт. — 1 120 ֏

от 10 шт. — 1 000 ֏

Добавить в корзину 1 шт. на сумму 1 920 ֏

Альтернативные предложения1

Номенклатурный номер: 8002020057

Электроэлемент

Trans MOSFET N-CH 620V 2.2A 3-Pin(3+Tab) TO-220AB Tube

Current - Continuous Drain (Id) @ 25В°C	2.2A(Tc)
Drain to Source Voltage (Vdss)	620V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 50V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Obsolete
Power Dissipation (Max)	45W(Tc)
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1.1A, 10V
Series	SuperMESH3в(ў
Supplier Device Package	TO-220
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 50ВµA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	2.2
Maximum Drain Source Resistance (mOhm)	3600@10V
Maximum Drain Source Voltage (V)	620
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	45000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	SuperMESH 3
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	22
Typical Gate Charge @ 10V (nC)	15
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Input Capacitance @ Vds (pF)	340@50V
Typical Rise Time (ns)	4.4
Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	8
Вес, г	3.5