STF19NM50N
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см. техническую документацию
см. техническую документацию
1 шт. с центрального склада, срок 3 недели
1 940 ֏
1 шт.
на сумму 1 940 ֏
Альтернативные предложения2
Описание
Электроэлемент
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1000 |
Fall Time | 17 ns |
Id - Continuous Drain Current | 14 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 30 W |
Product Category | MOSFET |
Qg - Gate Charge | 34 nC |
Rds On - Drain-Source Resistance | 250 mOhms |
Rise Time | 16 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 61 ns |
Typical Turn-On Delay Time | 12 ns |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 25 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 17 ns |
Id - Continuous Drain Current: | 14 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 30 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 34 nC |
Rds On - Drain-Source Resistance: | 250 mOhms |
Rise Time: | 16 ns |
Series: | STF19NM50N |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 61 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 3.5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 7 августа1 | бесплатно |
HayPost | 11 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг