STP5NK100Z, Транзистор: N-MOSFET, полевой, 1000В, 2,2А, 125Вт, TO220-3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
580 шт., срок 8 недель
2 230 ֏
от 3 шт. —
1 740 ֏
от 10 шт. —
1 510 ֏
от 50 шт. —
1 180 ֏
Добавить в корзину 1 шт.
на сумму 2 230 ֏
Альтернативные предложения3
Описание
Описание Транзистор: N-MOSFET, полевой, 1000В, 2,2А, 125Вт, TO220-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Resistance | 3.7 Ω |
| Maximum Drain Source Voltage | 1000 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Width | 4.6mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 3.5 |
| Maximum Drain Source Resistance (mOhm) | 3700@10V |
| Maximum Drain Source Voltage (V) | 1000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Typical Input Capacitance @ Vds (pF) | 1154@25V |
| Typical Rise Time (ns) | 7.7 |
| Typical Turn-Off Delay Time (ns) | 51.5 |
| Typical Turn-On Delay Time (ns) | 22.5 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 19 ns |
| Forward Transconductance - Min | 4 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 3.5 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Pd - Power Dissipation | 125 W |
| Qg - Gate Charge | 42 nC |
| Rds On - Drain-Source Resistance | 3.7 Ohms |
| Rise Time | 7.7 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 51.5 ns |
| Typical Turn-On Delay Time | 22.5 ns |
| Vds - Drain-Source Breakdown Voltage | 1000 V |
| Vgs - Gate-Source Voltage | 30 V |
| Вес, г | 2.8 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 456 КБ
Datasheet
pdf, 448 КБ
Datasheet STP5NK100Z, STF5NK100Z, STW5NK100Z
pdf, 453 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
