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STS4DNF60L, Транзистор N-MOSFET x2, STripFET™ F7, полевой, 60В, 3А, 2,5Вт, SO8

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см. техническую документацию

762 шт., срок 8 недель

1 250 ֏

от 5 шт. — 760 ֏

от 25 шт. — 660 ֏

от 100 шт. — 520 ֏

Добавить в корзину 1 шт. на сумму 1 250 ֏

Альтернативные предложения2

Номенклатурный номер: 8002566734

Бренд: STMicroelectronics

Описание

Описание Транзистор N-MOSFET x2, STripFET™ F7, полевой, 60В, 3А, 2,5Вт, SO8

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Resistance	55 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-15 V, +15 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Series	STripFET
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	15 nC @ 4.5 V
Width	4mm
Automotive	No
Configuration	Dual Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4
Maximum Drain Source Resistance (mOhm)	55@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±15
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
PPAP	No
Process Technology	STripFET
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SO N
Typical Fall Time (ns)	10
Typical Gate Charge @ Vgs (nC)	15@4.5V
Typical Input Capacitance @ Vds (pF)	1030@25V
Typical Rise Time (ns)	28
Typical Turn-Off Delay Time (ns)	45
Typical Turn-On Delay Time (ns)	15
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	10 ns
Forward Transconductance - Min:	25 S
Id - Continuous Drain Current:	4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Rds On - Drain-Source Resistance:	55 mOhms
Rise Time:	28 ns
Series:	STS4DNF60L
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel Power MOSFET
Type:	Power MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Brand	STMicroelectronics
Factory Pack Quantity	2500
Fall Time	10 ns
Forward Transconductance - Min	25 S
Height	1.65 mm
Id - Continuous Drain Current	4 A
Length	5 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Pd - Power Dissipation	2 W
Rds On - Drain-Source Resistance	55 mOhms
Rise Time	28 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Type	Power Mosfet
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	15 V
Вес, г	0.15