STP45N65M5, Транзистор N-МОП, полевой, 650В, 22А, 210Вт, TO220-3
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
STM MDmeshV Power MOSFETs - Thru-Hole
Технические параметры
Case | TO220-3 |
Drain current | 22A |
Drain-source voltage | 650V |
Features of semiconductor devices | ESD protected gate |
Gate-source voltage | ±25V |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | STMicroelectronics |
Mounting | THT |
On-state resistance | 78mΩ |
Polarisation | unipolar |
Power dissipation | 210W |
Technology | MDmesh™ V |
Type of transistor | N-MOSFET |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Id - Continuous Drain Current: | 35 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 208 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 82 nC |
Rds On - Drain-Source Resistance: | 78 mOhms |
Series: | Mdmesh M5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Brand | STMicroelectronics |
Factory Pack Quantity | 1000 |
Id - Continuous Drain Current | 35 A |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 208 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 78 mOhms |
RoHS | Details |
Series | MDmesh M5 |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Resistance | 78 mΩ |
Maximum Drain Source Voltage | 710 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 210 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 82 nC @ 10 V |
Width | 4.6mm |
Вес, г | 1.99 |
Техническая документация
...45N65M5
pdf, 1678 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1662 КБ
Datasheet STP45N65M5
pdf, 1681 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
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