STD12NF06T4, Транзистор N-МОП, полевой, 60В 12A 30Вт 0,1Ом TO252

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791 шт., срок 8 недель

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Номенклатурный номер: 8002620431

Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R

Case	DPAK
Drain current	8.5A
Drain-source voltage	60V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	STMicroelectronics
Mounting	SMD
On-state resistance	0.1Ω
Polarisation	unipolar
Power dissipation	30W
Technology	SuperMesh™
Type of transistor	N-MOSFET
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	12
Maximum Drain Source Resistance (mOhm)	100@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	30000
Minimum Operating Temperature (°C)	-55
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Tab	Tab
Typical Fall Time (ns)	6
Typical Gate Charge @ 10V (nC)	10
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate to Drain Charge (nC)	3.5
Typical Gate to Source Charge (nC)	3
Typical Input Capacitance @ Vds (pF)	315@25V
Typical Output Capacitance (pF)	70
Typical Reverse Recovery Charge (nC)	65
Typical Rise Time (ns)	18
Typical Turn-Off Delay Time (ns)	17
Typical Turn-On Delay Time (ns)	7
Вес, г	0.37