STP8NM50N, Транзистор: N-MOSFET, MDmesh™ ||, полевой, 500В, 3А, 45Вт, TO220-3

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Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THT

Описание Транзистор: N-MOSFET, MDmesh™ ||, полевой, 500В, 3А, 45Вт, TO220-3 Характеристики

Current - Continuous Drain (Id) @ 25В°C	5A(Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	364pF @ 50V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	45W(Tc)
Rds On (Max) @ Id, Vgs	790mOhm @ 2.5A, 10V
Series	MDmeshв(ў II
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	45 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	14 nC
Rds On - Drain-Source Resistance:	790 mOhms
Series:	STP8NM50N
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	30