STW13N80K5, Транзистор N-МОП, полевой, 800В, 7,6А, 190Вт, TO247-3

Изображения служат только для ознакомления,
см. техническую документацию

17 шт., срок 8 недель

6 100 ֏

от 3 шт. — 5 400 ֏

от 10 шт. — 4 170 ֏

Добавить в корзину 1 шт. на сумму 6 100 ֏

Альтернативные предложения3

Номенклатурный номер: 8002659513

Описание Транзистор N-МОП, полевой, 800В, 7,6А, 190Вт, TO247-3 Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	600
Fall Time:	16 ns
Id - Continuous Drain Current:	12 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	29 nC
Rds On - Drain-Source Resistance:	450 mOhms
Rise Time:	16 ns
Series:	STW13N80K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	600
Fall Time	16 ns
Id - Continuous Drain Current	12 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	190 W
Product Category	MOSFET
Qg - Gate Charge	29 nC
Rds On - Drain-Source Resistance	450 mOhms
Rise Time	16 ns
RoHS	Details
Series	MDmesh K5
Technology	Si
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	42 ns
Typical Turn-On Delay Time	16 ns
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3 V
Вес, г	6.75