STB55NF06LT4, Транзистор полевой MOSFET N-канальный 60В 55А 95Вт
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159 шт. с центрального склада, срок 3 недели
750 ֏
Мин. кол-во для заказа 3 шт.
от 15 шт. —
620 ֏
от 29 шт. —
590 ֏
от 58 шт. —
550 ֏
3 шт.
на сумму 2 250 ֏
Альтернативные предложения2
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 60В 55А 95Вт
Технические параметры
Корпус | D2Pak(TO-263) | |
Channel Mode | Enhancement | |
Channel Type | N | |
Maximum Continuous Drain Current | 55 A | |
Maximum Drain Source Resistance | 20 mΩ | |
Maximum Drain Source Voltage | 60 V | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Maximum Power Dissipation | 95 W | |
Minimum Gate Threshold Voltage | 1V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | D2PAK(TO-263) | |
Pin Count | 3 | |
Series | STripFET II | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 27 nC @ 4.5 V | |
Width | 10.4mm | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
Fall Time: | 20 ns | |
Forward Transconductance - Min: | 30 S | |
Id - Continuous Drain Current: | 55 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +175 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package/Case: | D2PAK-3(TO-263-3) | |
Pd - Power Dissipation: | 95 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 37 nC | |
Qualification: | AEC-Q101 | |
Rds On - Drain-Source Resistance: | 14 mOhms | |
Rise Time: | 100 ns | |
Series: | STB55NF06L | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 40 ns | |
Typical Turn-On Delay Time: | 20 ns | |
Vds - Drain-Source Breakdown Voltage: | 60 V | |
Vgs - Gate-Source Voltage: | -16 V, +16 V | |
Vgs th - Gate-Source Threshold Voltage: | 1 V | |
Brand | STMicroelectronics | |
Configuration | Single | |
Factory Pack Quantity | 1000 | |
Fall Time | 20 ns | |
Forward Transconductance - Min | 30 S | |
Height | 4.6 mm | |
Id - Continuous Drain Current | 55 A | |
Length | 10.4 mm | |
Manufacturer | STMicroelectronics | |
Mounting Style | SMD/SMT | |
Number of Channels | 1 Channel | |
Package / Case | TO-263-3 | |
Packaging | Cut Tape | |
Pd - Power Dissipation | 95 W | |
Product Category | MOSFET | |
Rds On - Drain-Source Resistance | 14 mOhms | |
Rise Time | 100 ns | |
RoHS | Details | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | MOSFET | |
Typical Turn-Off Delay Time | 40 ns | |
Typical Turn-On Delay Time | 20 ns | |
Unit Weight | 0.139332 oz | |
Vds - Drain-Source Breakdown Voltage | 60 V | |
Vgs - Gate-Source Voltage | 16 V | |
Continuous Drain Current (Id) | 55A | |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@27.5A, 10V | |
Drain Source Voltage (Vdss) | 60V | |
Gate Threshold Voltage (Vgs(th)@Id) | 4.7V@250uA | |
Input Capacitance (Ciss@Vds) | 1.7nF@25V | |
Operating Temperature | -55℃~+175℃@(Tj) | |
Power Dissipation (Pd) | 95W | |
Total Gate Charge (Qg@Vgs) | 37nC@4.5V | |
Вес, г | 1.2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 336 КБ
Datasheet STP55NF06L
pdf, 319 КБ
Datasheet STP55NF06L
pdf, 332 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
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2 для посылок массой до 1 кг