FGH75T65UPD
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
8 100 ֏
1 шт.
на сумму 8 100 ֏
Описание
Электроэлемент
IGBT, AEC-Q101, 650V, 150A, TO-247; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.69V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:Trench Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
Current - Collector (Ic) (Max) | 150A |
Current - Collector Pulsed (Icm) | 225A |
Gate Charge | 578nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Manufacturer | ON Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 375W |
Reverse Recovery Time (trr) | 85ns |
Series | Automotive, AEC-Q101 |
Standard Package | 450 |
Supplier Device Package | TO-247-3 |
Switching Energy | 2.85mJ(on), 1.2mJ(off) |
Td (on/off) @ 25В°C | 32ns/166ns |
Test Condition | 400V, 75A, 3 Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Вес, г | 6.39 |
Техническая документация
Datasheet
pdf, 522 КБ
Документация
pdf, 935 КБ