STL8N80K5

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1 шт. с центрального склада, срок 3 недели

1 500 ֏

1 шт. на сумму 1 500 ֏

Альтернативные предложения2

Номенклатурный номер: 8003102454

Электроэлемент

Trans MOSFET N-CH 800V 4.5A 8-Pin Power Flat T/R

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	20 ns
Id - Continuous Drain Current	4.5 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerFLAT-5x6-VHV-8
Packaging	Reel
Pd - Power Dissipation	42 W
Product Category	MOSFET
Qg - Gate Charge	16.5 nC
Rds On - Drain-Source Resistance	800 mOhms
Rise Time	14 ns
RoHS	Details
Series	MDmesh K5
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	12 ns
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	20 ns
Id - Continuous Drain Current:	4.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	PowerFLAT-5x6-8
Pd - Power Dissipation:	42 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	16.5 nC
Rds On - Drain-Source Resistance:	800 mOhms
Rise Time:	14 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V