STP8NK100Z, Транзистор полевой MOSFET N-канальный 1000В 6.5А 160Вт
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162 шт. с центрального склада, срок 3 недели
3 000 ֏
от 4 шт. —
2 560 ֏
от 8 шт. —
2 380 ֏
от 16 шт. —
2 290 ֏
1 шт.
на сумму 3 000 ֏
Альтернативные предложения3
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 1000В 6.5А 160Вт
Технические параметры
| Корпус | TO-220AB | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Fall Time: | 30 ns | |
| Forward Transconductance - Min: | 7 S | |
| Id - Continuous Drain Current: | 6.5 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-220-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 160 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 73 nC | |
| Rds On - Drain-Source Resistance: | 1.85 Ohms | |
| Rise Time: | 19 ns | |
| Series: | STP8NK100Z | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | SuperMESH | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel MOSFET | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 59 ns | |
| Typical Turn-On Delay Time: | 28 ns | |
| Vds - Drain-Source Breakdown Voltage: | 1 kV | |
| Vgs - Gate-Source Voltage: | -30 V, +30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Brand | STMicroelectronics | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 1000 | |
| Fall Time | 30 ns | |
| Forward Transconductance - Min | 7 S | |
| Height | 9.15 mm | |
| Id - Continuous Drain Current | 6.5 A | |
| Length | 10.4 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-220-3 | |
| Packaging | Tube | |
| Pd - Power Dissipation | 160 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 73 nC | |
| Rds On - Drain-Source Resistance | 1.6 Ohms | |
| Rise Time | 19 ns | |
| RoHS | Details | |
| Series | N-channel MDmesh | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 59 ns | |
| Typical Turn-On Delay Time | 28 ns | |
| Vds - Drain-Source Breakdown Voltage | 1000 V | |
| Vgs - Gate-Source Voltage | 30 V | |
| Width | 4.6 mm | |
| Automotive | No | |
| Channel Type | N | |
| ECCN (US) | EAR99 | |
| Lead Shape | Through Hole | |
| Maximum Continuous Drain Current (A) | 6.5 | |
| Maximum Drain Source Resistance (mOhm) | 1850@10V | |
| Maximum Drain Source Voltage (V) | 1000 | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 160000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | SuperMESH | |
| Standard Package Name | TO-220 | |
| Supplier Package | TO-220AB | |
| Supplier Temperature Grade | Industrial | |
| Tab | Tab | |
| Typical Fall Time (ns) | 30 | |
| Typical Gate Charge @ 10V (nC) | 73 | |
| Typical Gate Charge @ Vgs (nC) | 73@10V | |
| Typical Input Capacitance @ Vds (pF) | 2180@25V | |
| Typical Rise Time (ns) | 19 | |
| Typical Turn-Off Delay Time (ns) | 59 | |
| Typical Turn-On Delay Time (ns) | 28 | |
| Вес, г | 8.165 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
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