STP3NK90ZFP, Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220FP Tube
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5400 шт., срок 8-10 недель
760 ֏
Мин. кол-во для заказа 210 шт.
от 393 шт. —
720 ֏
от 1113 шт. —
690 ֏
Добавить в корзину 210 шт.
на сумму 159 600 ֏
Альтернативные предложения2
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Описание Транзистор: N-MOSFET, полевой, 900В, 1,89А, 25Вт, TO220FP Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| кол-во в упаковке | 50 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 18 ns |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22.7 nC |
| Rds On - Drain-Source Resistance: | 4.8 Ohms |
| Rise Time: | 7 ns |
| Series: | STP3NK90ZFP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 45 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 3 |
| Maximum Drain Source Resistance (mOhm) | 4800@10V |
| Maximum Drain Source Voltage (V) | 900 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 25000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 18 |
| Typical Gate Charge @ 10V (nC) | 22.7 |
| Typical Gate Charge @ Vgs (nC) | 22.7@10V |
| Typical Input Capacitance @ Vds (pF) | 590@25V |
| Typical Rise Time (ns) | 7 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Typical Turn-On Delay Time (ns) | 18 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 18 ns |
| Height | 9.3 mm |
| Id - Continuous Drain Current | 3 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Pd - Power Dissipation | 25 W |
| Rds On - Drain-Source Resistance | 4.8 Ohms |
| Rise Time | 7 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 18 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Resistance | 4.8 Ω |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 25 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Package Type | TO-220FP |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 22.7 nC @ 10 V |
| Вес, г | 3.5 |
Техническая документация
Сроки доставки
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| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
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