STP120NF10, Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube

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15094 шт., срок 8-10 недель

2 670 ֏

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Номенклатурный номер: 8003196819

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор N-МОП, полевой, 100В 110A 312Вт 0,0105Ом TO220 Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	68 ns
Forward Transconductance - Min	90 S
Height	9.15 mm
Id - Continuous Drain Current	120 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	312 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	10.5 mOhms
Rise Time	90 ns
RoHS	Details
Series	N-channel STripFET
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	132 ns
Typical Turn-On Delay Time	25 ns
Unit Weight	0.050717 oz
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Width	4.6 mm
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Resistance	10.5 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	312 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	172 nC @ 10 V
Вес, г	1