MJD112T4, Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R

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2500 шт., срок 7-9 недель

223 ֏

Кратность заказа 2500 шт.

Добавить в корзину 2500 шт. на сумму 557 500 ֏

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Номенклатурный номер: 8003210772

Semiconductor - Discrete > Transistors > BJT - Darlington

Описание Транзистор: NPN, биполярный, Дарлингтон, 100В, 2А, 20Вт, DPAK Характеристики

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	200
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Manufacturer:	STMicroelectronics
Maximum Collector Cut-off Current:	20 uA
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	TO-252
Product Category:	Darlington Transistors
Product Type:	Darlington Transistors
Series:	MJD112
Subcategory:	Transistors
Transistor Polarity:	NPN
Base-Emitter Saturation Voltage (Max)	4(V)
Collector Current (DC)	2(A)
Collector Current (DC) (Max)	4 A
Collector-Base Voltage	100(V)
Collector-Base Voltage (Max)	100 V
Collector-Base Voltage(Max)	100 V
Collector-Emitter Saturation Voltage	2(V)
Collector-Emitter Voltage	100(V)
Configuration	Single
DC Current Gain	200
Emitter-Base Voltage	5(V)
Emitter-Base Voltage (Max)	5 V
Maximum Collector Cut-off Current	20
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-65C to 150C
Operating Temperature Classification	Military
Package Type	DPAK
Packaging	Tape and Reel
Pin Count	2+Tab
Polarity	NPN
Power Dissipation	20(W)
Rad Hardened	No
Вес, г	213.2