STP75NF75, Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
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см. техническую документацию
см. техническую документацию
1973 шт., срок 8-10 недель
980 ֏
Мин. кол-во для заказа 160 шт.
от 845 шт. —
910 ֏
Добавить в корзину 160 шт.
на сумму 156 800 ֏
Альтернативные предложения2
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Описание Транзистор: N-MOSFET, STripFET™ II, полевой, 75В, 70А, 300Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 30 ns |
| Forward Transconductance - Min | 20 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 80 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 9.5 mOhms |
| Rise Time | 100 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 66 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.6 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 30 ns |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 117 nC |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Rise Time: | 100 ns |
| Series: | STP75NF75 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 66 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 11 mΩ |
| Maximum Drain Source Voltage | 75 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 300 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 117 nC @ 10 V |
| MSL(Уровень чувствительности к влажности) | 1 |
| Диапазон рабочих температур | -55…+175 °С |
| Описание | 75V, 80A N-Channel MOSFET |
| Способ монтажа | Through Hole |
| Тип | MOSFET |
| Тип проводимости | N |
| Транспортная упаковка: размер/кол-во | 56*46*52/4000 |
| Упаковка | TUBE, 50 шт. |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 404 КБ
Datasheet STP75NF75
pdf, 418 КБ
Datasheet STP75NF75FP
pdf, 418 КБ
Datasheet STP75NF75
pdf, 409 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
| HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
