STW48N60DM2
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см. техническую документацию
см. техническую документацию
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40 шт. с центрального склада, срок 2-3 недели
7 600 ֏
от 2 шт. —
7 200 ֏
от 10 шт. —
6 800 ֏
Добавить в корзину 1 шт.
на сумму 7 600 ֏
Альтернативные предложения2
Описание
Электроэлемент
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 600 |
Fall Time | 9.8 ns |
Id - Continuous Drain Current | 40 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-247-3 |
Pd - Power Dissipation | 300 W |
Product Category | MOSFET |
Qg - Gate Charge | 70 nC |
Rds On - Drain-Source Resistance | 0.065 Ohms |
Rise Time | 27 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 131 ns |
Typical Turn-On Delay Time | 27 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 25 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Channel Type | N |
Forward Diode Voltage | 1.6V |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Resistance | 79 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 300 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Series | MDmesh DM2 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 70 nC @ 10 V |
Width | 5.15mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 600 |
Fall Time: | 9.8 ns |
Id - Continuous Drain Current: | 40 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 70 nC |
Rds On - Drain-Source Resistance: | 65 mOhms |
Rise Time: | 27 ns |
Series: | STW48N60DM2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 131 ns |
Typical Turn-On Delay Time: | 27 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 7.33 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 582 КБ
Datasheet STW48N60DM2
pdf, 717 КБ
Datasheet STW48N60DM2
pdf, 719 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 18 июля1 | бесплатно |
HayPost | 22 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг