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STL18N65M5

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6 шт. с центрального склада, срок 2-3 недели

5 200 ֏

от 2 шт. — 4 540 ֏

от 5 шт. — 4 150 ֏

Добавить в корзину 1 шт. на сумму 5 200 ֏

Альтернативные предложения1

Номенклатурный номер: 8004502061

Бренд: STMicroelectronics

Описание

Электроэлемент

Mosfet, N-Ch, 650V, 15A, 150Deg C, 57W Rohs Compliant: Yes |Stmicroelectronics STL18N65M5

Технические параметры

Brand	STMicroelectronics
Configuration	Dual Dual Drain
Factory Pack Quantity	3000
Fall Time	11 ns
Id - Continuous Drain Current	15 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	PowerFLAT-5x6-HV-8
Packaging	Cut Tape
Pd - Power Dissipation	57 W
Product Category	MOSFET
Qg - Gate Charge	31 nC
Rds On - Drain-Source Resistance	240 mOhms
Rise Time	7 ns
RoHS	Details
Series	MDmesh M5
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	9 ns
Typical Turn-On Delay Time	36 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	15 A
Maximum Drain Source Resistance	240 mΩ
Maximum Drain Source Voltage	710 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	57 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerFLAT 5x6
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	31 nC @ 10 V
Width	6.35mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	11 ns
Id - Continuous Drain Current:	15 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	PowerFLAT-5x6-8
Pd - Power Dissipation:	57 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	31 nC
Rds On - Drain-Source Resistance:	240 mOhms
Rise Time:	7 ns
Series:	Mdmesh M5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	9 ns
Typical Turn-On Delay Time:	36 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	0.1308