STB23NM50N, MOSFETs MDmesh II N-Ch 500V 17A ID 0.19 RDS(on)
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Описание
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Описание Транзистор: N-MOSFET, полевой, 500В, 11А, 125Вт, D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Rds On - Drain-Source Resistance: | 162 mOhms |
| Series: | STB23NM50N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 17A(Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 50V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 125W(Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| Series | MDmeshв(ў II |
| Supplier Device Package | D2PAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±25V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Resistance | 190 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Gate Threshold Voltage | 2V |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
| Width | 10.4mm |
| Вес, г | 1.2 |
Техническая документация
...23NM50N
pdf, 862 КБ
Datasheet
pdf, 862 КБ
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Сроки доставки
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| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
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