STB55NF06LT4, MOSFET N-Ch 60 Volt 55 Amp
![Фото 1/5 STB55NF06LT4, MOSFET N-Ch 60 Volt 55 Amp](https://static.chipdip.ru/lib/367/DOC012367935.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/843/DOC043843759.jpg)
![](https://static.chipdip.ru/lib/763/DOC016763328.jpg)
![](https://static.chipdip.ru/lib/763/DOC016763336.jpg)
![](https://static.chipdip.ru/lib/580/DOC029580236.jpg)
4833 шт., срок 6-9 недель
2 320 ֏
от 10 шт. —
1 830 ֏
от 100 шт. —
1 360 ֏
от 250 шт. —
1 180 ֏
Добавить в корзину 1 шт.
на сумму 2 320 ֏
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N-МОП, полевой, 60В 55A 95Вт 0,018Ом DІPak
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 30 S |
Id - Continuous Drain Current: | 55 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 95 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 37 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 14 mOhms |
Rise Time: | 100 ns |
Series: | STB55NF06L |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 40 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -16 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 55 A |
Maximum Drain Source Resistance | 20 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -16 V, +16 V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 95 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Series | STripFET II |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 27 nC @ 4.5 V |
Width | 10.4mm |
Brand | STMicroelectronics |
Configuration | Single |
Factory Pack Quantity | 1000 |
Fall Time | 20 ns |
Forward Transconductance - Min | 30 S |
Height | 4.6 mm |
Id - Continuous Drain Current | 55 A |
Length | 10.4 mm |
Manufacturer | STMicroelectronics |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-263-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 95 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 14 mOhms |
Rise Time | 100 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 40 ns |
Typical Turn-On Delay Time | 20 ns |
Unit Weight | 0.139332 oz |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 16 V |
Continuous Drain Current (Id) | 55A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@27.5A, 10V |
Drain Source Voltage (Vdss) | 60V |
Gate Threshold Voltage (Vgs(th)@Id) | 4.7V@250uA |
Input Capacitance (Ciss@Vds) | 1.7nF@25V |
Operating Temperature | -55℃~+175℃@(Tj) |
Power Dissipation (Pd) | 95W |
Total Gate Charge (Qg@Vgs) | 37nC@4.5V |
Вес, г | 4 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 336 КБ
Datasheet STP55NF06L
pdf, 319 КБ
Datasheet STP55NF06L
pdf, 332 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг