STGW25H120F2, IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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см. техническую документацию
см. техническую документацию
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Описание
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1200V H Series Trench Gate Field-Stop IGBTsSTMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.1 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 50 A |
Continuous Collector Current Ic Max: | 25 A |
Factory Pack Quantity: Factory Pack Quantity: | 600 |
Gate-Emitter Leakage Current: | 250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 375 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | STGW25H120F2 |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 38 |
Техническая документация
Datasheet
pdf, 934 КБ
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