STGW25H120F2, IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

STGW25H120F2, IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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см. техническую документацию
746 шт., срок 6-9 недель
6 700 ֏
от 25 шт.4 760 ֏
от 100 шт.4 110 ֏
от 600 шт.3 820 ֏
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Номенклатурный номер: 8004583837
Бренд: STMicroelectronics

Описание

Unclassified
1200V H Series Trench Gate Field-Stop IGBTs
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.1 V
Configuration: Single
Continuous Collector Current at 25 C: 50 A
Continuous Collector Current Ic Max: 25 A
Factory Pack Quantity: Factory Pack Quantity: 600
Gate-Emitter Leakage Current: 250 nA
Manufacturer: STMicroelectronics
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 375 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: STGW25H120F2
Subcategory: IGBTs
Technology: Si
Вес, г 38

Техническая документация

Datasheet
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