STGWA40H65DFB, IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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538 шт., срок 7-9 недель

4 320 ֏

от 10 шт. — 3 390 ֏

от 25 шт. — 2 820 ֏

от 100 шт. — 2 370 ֏

1 шт. на сумму 4 320 ֏

Альтернативные предложения1

Номенклатурный номер: 8004583846

Unclassified

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	+/-250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	283 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGWA40H65DFB
Subcategory:	IGBTs
Technology:	Si
Вес, г	6