STP24N60DM2, MOSFETs N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
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см. техническую документацию
см. техническую документацию
819 шт., срок 6-9 недель
4 360 ֏
от 10 шт. —
3 830 ֏
от 25 шт. —
2 590 ֏
от 100 шт. —
2 240 ֏
Добавить в корзину 1 шт.
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Альтернативные предложения3
Описание
Unclassified
Описание Транзистор N-МОП, полевой, 600В 18A 150Вт 0,2Ом TO220
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Rise Time: | 8.7 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 15 ns |
| Id - Continuous Drain Current | 18 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 29 nC |
| Rds On - Drain-Source Resistance | 200 mOhms |
| Rise Time | 8.7 ns |
| RoHS | Details |
| Series | MDmesh DM2 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 60 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Continuous Drain Current (Id) | 20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 160mΩ@10V |
| Drain Source Voltage (Vdss) | 650V |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Type | N Channel |
| Вес, г | 2 |
Техническая документация
stb24n60dm2
pdf, 1195 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
