Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STP24NF10, MOSFET N-Ch 100 Volt 24 Amp

STP24NF10, MOSFET N-Ch 100 Volt 24 Amp

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8716 шт., срок 6-9 недель

1 920 ֏

от 10 шт. — 1 520 ֏

от 100 шт. — 1 190 ֏

от 250 шт. — 1 100 ֏

Добавить в корзину 1 шт. на сумму 1 920 ֏

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Номенклатурный номер: 8004584040

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, STripFET™ II, полевой, 100В, 18А, 85Вт Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	20 ns
Forward Transconductance - Min:	10 S
Id - Continuous Drain Current:	26 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	85 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	30 nC
Rds On - Drain-Source Resistance:	60 mOhms
Rise Time:	15 ns
Series:	STP24NF10
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	60 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2000
Fall Time	20 ns
Forward Transconductance - Min	10 S
Height	9.15 mm
Id - Continuous Drain Current	26 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	85 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	55 mOhms
Rise Time	45 ns
RoHS	Details
Series	N-channel STripFET
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	60 ns
Unit Weight	0.01164 oz
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Width	4.6 mm
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Resistance	70 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	85 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	30 nC @ 10 V
Вес, г	1.95