STP3NK90Z, MOSFETs N-Ch 900 Volt 3 Amp Zener SuperMESH

Изображения служат только для ознакомления,
см. техническую документацию

1301 шт., срок 6-9 недель

2 580 ֏

от 10 шт. — 1 690 ֏

от 100 шт. — 1 400 ֏

от 250 шт. — 1 270 ֏

Добавить в корзину 1 шт. на сумму 2 580 ֏

Альтернативные предложения1

Номенклатурный номер: 8004584044

Unclassified

Описание Транзистор: N-MOSFET, полевой, 900В, 1,89А, 90Вт, TO220-3 Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	18 ns
Forward Transconductance - Min:	2.7 S
Id - Continuous Drain Current:	3 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22.7 nC
Rds On - Drain-Source Resistance:	4.8 Ohms
Rise Time:	7 ns
Series:	STP3NK90Z
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Resistance	4.8 Ω
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	90 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	22.7 nC @ 10 V
Width	4.6mm
Вес, г	2