STP40NF20, MOSFETs Low charge STripFET
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см. техническую документацию
см. техническую документацию
901 шт., срок 6-9 недель
3 600 ֏
от 10 шт. —
3 380 ֏
от 25 шт. —
2 850 ֏
от 100 шт. —
2 290 ֏
Добавить в корзину 1 шт.
на сумму 3 600 ֏
Альтернативные предложения2
Описание
Unclassified
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 30 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 160 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 75 nC |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Rise Time: | 44 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 74 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 40 |
| Maximum Drain Source Resistance (mOhm) | 45@10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 160000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | STripFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 22 |
| Typical Gate Charge @ 10V (nC) | 75 |
| Typical Gate Charge @ Vgs (nC) | 75@10V |
| Typical Input Capacitance @ Vds (pF) | 2500@25V |
| Typical Rise Time (ns) | 44 |
| Typical Turn-Off Delay Time (ns) | 74 |
| Typical Turn-On Delay Time (ns) | 20 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 22 ns |
| Forward Transconductance - Min | 30 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 40 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Pd - Power Dissipation | 160 W |
| Rds On - Drain-Source Resistance | 45 mOhms |
| Rise Time | 44 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 74 ns |
| Typical Turn-On Delay Time | 20 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.6 mm |
| Вес, г | 2 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
