STGW80H65DFB, IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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см. техническую документацию
см. техническую документацию
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1467 шт., срок 6-9 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
HB/HB2 Series Insulated-Gate Bipolar Transistors STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 120 A |
Continuous Collector Current Ic Max: | 80 A |
Factory Pack Quantity: | 600 |
Gate-Emitter Leakage Current: | 250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 469 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Brand | STMicroelectronics |
Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.6 V |
Configuration | Single |
Continuous Collector Current at 25 C | 120 A |
Continuous Collector Current Ic Max | 80 A |
Factory Pack Quantity | 600 |
Gate-Emitter Leakage Current | 250 nA |
Manufacturer | STMicroelectronics |
Maximum Gate Emitter Voltage | 20 V |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Pd - Power Dissipation | 469 W |
Product Category | IGBT Transistors |
RoHS | Details |
Series | 600-650V IGBTs |
Technology | Si |
Case | TO247-3 |
Collector current | 80A |
Collector-emitter voltage | 650V |
Features of semiconductor devices | integrated anti-parallel diode |
Gate charge | 414nC |
Gate-emitter voltage | ±20V |
Kind of package | tube |
Mounting | THT |
Power dissipation | 470W |
Pulsed collector current | 300A |
Type of transistor | IGBT |
Вес, г | 38 |
Техническая документация
Datasheet
pdf, 647 КБ
Datasheet STGWT80H65DFB
pdf, 663 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг